s8658-01 s8658-01 is a fft-ccd area image sensor specifically developed for x-ray imaging. since a fos (fiber optic plate with scintilla tor) to convert x- rays into visible light is mounted on the ccd chip, x-ray images can be captured in fine detail. three ccd chips are linearly a rranged in close proximity to form a long and narrow sensor format. effective size of each active area is 73.728 (h) 6.144 (v) mm 2 , so the overall active area length of the three chips is up to 220 mm in length. each ccd chip has 1536 128 pixels and the pixel size is 48 48 m. when used in tdi operation mode which is a special feature of this ccd image sensor, even x-ray images of a moving object can b e clearly acquired, making s8658-01 ideal for non-destructive inspection of products carried on a belt conveyor, etc. features l fft-ccd coupled with fos for x-ray imaging l 1536 (h) 128 (v) pixel format l pixel size: 48 48 m l slit-like image of 220 mm long by aligning 3 ccd chips together l coupled with fos for x-ray imaging l tdi (time delay integration) operation l 100 % fill factor l wide dynamic range l low dark current l mpp operation applications l general x-ray imaging l non-destructive inspection l dental panorama, cephalo image sensor ccd area image sensor front-illuminated fft-ccd for x-ray imaging selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm(v)] s8658-01 non-cooled 1536 128 1536 128 73.728 6.144 note) as an input window, fos is suited to s8658-01. general ratings parameter specification ccd structure full frame transfer or tdi x-ray sensitive area 220 6 mm fill factor 100 % number of active pixels 1536 (h) 128 (v) * 1 pixel size 48 (h) 48 (v) m ccd active area 73.728 (h) 6.144 (v) mm * 1 vertical clock phase 2 phase and 2 line horizontal clock phase 2 phase and 2 line output circuit two-stage mosfet source follower with load resistance x-ray resolution 4 to 6 lp/mm at 60 kvp, 20 gy total dose irradiation 50 gy max. package 60 pin ceramic package window fos (fiber optic plate with scintillator) *1: number of active pixels per chip. three chips are used. 1
ccd area image sensor s8658-01 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit storage temperature tstg -20 - +70 c operating temperature to p r 0 - +40 c od voltage v od -0.5 - +20 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v igv voltage v igv -15 - +15 v igh voltage v igh -15 - +15 v sg voltage v sg -15 - +15 v og voltage v og -15 - +15 v rg voltage v rg -15 - +15 v tg voltage v tg -15 - +15 v vertical clock voltage v p1av , v p2av v p1bv , v p2bv -15 - +15 v horizontal clock voltage v p1ah , v p2ah v p1bh , v p2bh -15 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 18 v reset drain voltage v rd 12 13 14 v output gate voltage v og -0.5 2 5 v output transistor ground voltage v ssa - 0 - v substrate voltage v ssd -5 0 - v vertical input source v isv - v rd - vertical input gate v igv -8 0 - te s t p o i n t horizontal input gate v igh -8 0 - v high v p1avh , v p2avh v p1bvh , v p2bvh 036 vertical shift register clock voltage low v p1avl , v p2avl v p1bvl , v p2bvl -9 -8 -7 v high v p1ahh , v p2ahh v p1bhh , v p2bhh 0 3 6 horizontal shift register clock voltage low v p1ahl , v p2ahl v p1bhl , v p2bhl -9 -8 -7 v high v sgh 036 summing gate voltage low v sgl -9 -8 -7 v high v rgh 0 3 6 reset gate voltage low v rgl -9 -8 -7 v high v tgh 036 transfer gate voltage low v tgl -9 -8 -7 v electrical characteristics (ta=25 c) parameter symbol remark min. typ. max. unit signal output frequency fc - 2 4 mhz reset clock frequency frg - 2 4 mhz vertical shift register capacitance c p1av , c p2av c p1bv, c p2bv - 15000 - pf horizontal shift register capacitance c p1ah , c p2ah c p1bh , c p2bh - 500 - pf summing gate capacitance c sg -15- pf reset gate capacitance c rg - 10 - pf transfer gate capacitance c tg - 500 - pf transfer efficiency cte * 2 0.99995 0.99999 - dc output level vout * 3 5811v output impedance zo * 3 - 500 - ? power dissipation p * 3, * 4 -60-mw *2: measured at half of the full well capacity. cte is defined per pixel. *3: v od =15 v. *4: power dissipation of the on-chip amplifier (each chip). 2
ccd area image sensor s8658-01 electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol remark min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 600 1200 - horizontal 600 1200 - full well capacity summing fw 600 1200 - ke - ccd node sensitivity sv * 5 0.45 0.6 - v/e - dark current (mpp mode) ds * 6 - 8 24 ke - /pixel/s ta=25 c - 90 - readout noise ta=-40 c nr * 7 - 60 120 e - rms dynamic range dr * 8 5000 20000 - x-ray response non-uniformity xrnu * 9, * 10 - 10 30 % white spots - - 10 point defects * 11 black spots - - 10 cluster defects * 12 - - 0 blemish column defects - * 13 - - 0 - x-ray resolution ? r 4 6 - lp/mm *5: v od =15 v. *6: dark current doubles for every 5 to 7 c. *7: operating frequency is 2 mhz. *8: dynamic range = full well capacity / readout noise *9: x-ray irradiation of 60 kvp, measured at half of the full well capacity. *10: xrnu (%) = noise / signal 100 noise: fixed pattern noise (peak to peak) measuring region that is within 220.0 mm (h) 6.0 mm (v) (refer to dimensional outline) *11: white spots > 20 times of typ. dark signal (8 ke - /pixel/s). black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *12: continuous 2 to 9 point defects. *13: continuous >10 point defects. 3 spacial frequency (line pair/mm) 0 0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 (x-ray source: 60 kvp) ctf 48 26 37 15 10 9 x-ray exposure (gy) 0 0 1000 500 (x-ray source: 70 kvp, filter: aluminum 4 mm t ) output voltage (mv) 20 40 10 30 resolution kmpdb0248ea response kmpdb0249eb
ccd area image sensor s8658-01 ...... 1 2 3 4 5 6 234 125 126 127 128 s1 s2 s3 s4 s5 s6 s1531 s1532 s1533 s1534 s1535 s1536 ...... ...... 1531 1532 1533 1534 1535 1536 isv a14, b14 a15, b15 igv p1bv p2bv p1av p2av tg rg rd ssa os od og sg p2ah p1ah p2bh p1bh igh ssd ...... 1 2 3 4 5 6 234 125 126 127 128 s1 s2 s3 s4 s5 s6 s1531 s1532 s1533 s1534 s1535 s1536 ...... ...... 1531 1532 1533 1534 1535 1536 p2ah p1ah p2bh p1bh igh ssd left chip (chip a), center chip (chip b) right chip (chip c) s1, ... , s1536: active elements s1, ... , s1536: active elements a16, b16 a17, b17 a18, b18 a19, b19 a20, b20 a1, b1 a2, b2 a3, b3 a4, b4 a5, b5 a6, b6 a7, b7 a8, b8 a9, b9 a10, b10 a11, b11 a12, b12 a13, b13 c1 c2 c3 c4 c5 c6 isv igv p1bv p2bv p1av p2av tg rg rd ssa os od og sg c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 c17 c18 c19 c20 device structure kmpdc0143ea pixel format left horizontal direction right blank optical black isolation effective isolation optical black blank 0 0 0 1536 0 0 0 top vertical direction bottom isolation effective isolation 0 128 0 4 timing chart (tdi operation) p1av, p1bv p2av, p2bv tg p1ah, p1bh p2ah, p2bh sg rg os enlarged view tpwv to v r tpwr tg p1ah, p1bh p2ah, p2bh sg rg os s2 s3 s1 s4 s5 s1535 s1536 tpwh, tpws kmpdc0142eb
ccd area image sensor s8658-01 5 timing chart (tdi operation, 2 2 pixel binning) p1av, p1bv p2av, p2bv tg p1ah, p1bh p2ah, p2bh sg rg os enlarged view tpwv to v r tpwr tg p1ah, p1bh p2ah, p2bh sg rg os s1 + s2 s3 + s4 s1535 + s1536 tpwh, tpws kmpdc0111ec parameter symbol remark min. typ. max. unit pulse width tpwv 30 60 - s p1av, p1bv, p2av, p2bv, tg rise and fall time tprv, tpfv * 14, * 15 200 - - ns pulse width tpwh 125 250 - ns rise and fall time tprh, tpfh 10 - - ns p1ah, p1bh, p2ah, p2bh duty ratio * 15 - 50 - % pulse width tpws 125 250 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - 50 - % pulse width tpwr 10 50 - ns rg rise and fall time tprr, tpfr 5 - - ns tg-p1ah, p1bh overlap time tovr 10 20 - s *14: tg terminal can be short-circuited to p2av terminal. *15: symmetrical pulses should be overlapped at 50 % of maximum amplitude.
ccd area image sensor s8658-01 6 kmpda0149ed dimensional outline (unit: mm) 15.24 30.48 45.72 45.72 60.96 1.6 fop 3.0 5.6 60.96 b20 b14 a20 a14 left chip right chip a1 a13 c1 c13 b1 b13 c20 c14 center chip 0.45 2.54 3.4 fop 7.2 0.2 28.0 0.3 25.4 x-ray sensitive area: 220.0 (h) 6.0 (v) 223.0 0.5 fop 228.0 0.3 * 1 * 2 scintillator tdi direction left chip edge pixel dead space 1: 250 m min. 350 m max. 50 m max. center chip center chip edge pixel dead space 2: 130 m min. 200 m max. 50 m max. right chip *1 details *2 details
ccd area image sensor s8658-01 7 pin connections pin no. symbol description remark a1, b1 rg reset gate a2, b2 rd reset drain a3, b3 ssa analog ground a4, b4 os output transistor source a5, b5 od output transistor drain a6, b6 og output gate a7, b7 sg summing gate a8, b8 p2ah ccd horizontal register clock a-2 a9, b9 p1ah ccd horizontal register clock a-1 a10, b10 ssd digital ground a11, b11 p2bh ccd horizontal register clock b-2 same timing as p2ah a12, b12 p1bh ccd horizontal register clock b-1 same timing as p1ah a13, b13 igh test point (horizontal input gate) a14, b14 isv test point (vertical input source) shorted to rd a15, b15 igv test point (vertical input gate) a16, b16 p1bv ccd vertical register clock b-1 same timing as p1av a17, b17 p2bv ccd vertical register clock b-2 same timing as p2av a18, b18 p1av ccd vertical register clock a-1 a19, b19 p2av ccd vertical register clock a-2 a20, b20 tg transfer gate c1 igh test point (horizontal input gate) c2 p1bh ccd horizontal register clock b-1 same timing as p1ah c3 p2bh ccd horizontal register clock b-2 same timing as p2ah c4 ssd digital ground c5 p1ah ccd horizontal register clock a-1 c6 p2ah ccd horizontal register clock a-2 c7 sg summing gate c8 og output gate c9 od output transistor drain c10 os output transistor source c11 ssa analog ground c12 rd reset drain c13 rg reset gate c14 tg transfer gate c15 p2av ccd vertical register clock a-2 c16 p1av ccd vertical register clock a-1 c17 p2bv ccd vertical register clock b-2 same timing as p2av c18 p1bv ccd vertical register clock b-1 same timing as p1av c19 igv test point (vertical input gate) c20 isv test point (vertical input source) shorted to rd precautions for use (electrostatic countermeasures) * handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band wit h an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs.
ccd area image sensor s8658-01 8 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information described in this material is current as of march, 2011. product specifications are subject to change without prior notice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. cat. no. kmpd1078e08 apr. 2011 dn
|
